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HGTG30N60A4D_NL PDF预览

HGTG30N60A4D_NL

更新时间: 2024-09-17 19:35:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网瞄准线功率控制晶体管
页数 文件大小 规格书
9页 152K
描述
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN

HGTG30N60A4D_NL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.11
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):75 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE最大降落时间(tf):70 ns
门极发射器阈值电压最大值:7 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):463 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):238 ns
标称接通时间 (ton):35 nsBase Number Matches:1

HGTG30N60A4D_NL 数据手册

 浏览型号HGTG30N60A4D_NL的Datasheet PDF文件第2页浏览型号HGTG30N60A4D_NL的Datasheet PDF文件第3页浏览型号HGTG30N60A4D_NL的Datasheet PDF文件第4页浏览型号HGTG30N60A4D_NL的Datasheet PDF文件第5页浏览型号HGTG30N60A4D_NL的Datasheet PDF文件第6页浏览型号HGTG30N60A4D_NL的Datasheet PDF文件第7页 
HGTG30N60A4D  
Data Sheet  
September 2004  
600V, SMPS Series N-Channel IGBT with  
Anti-Parallel Hyperfast Diode  
Features  
• >100kHz Operation At 390V, 30A  
• 200kHz Operation At 390V, 18A  
• 600V Switching SOA Capability  
The HGTG30N60A4D is a MOS gated high voltage  
switching devices combining the best features of MOSFETs  
and bipolar transistors. This device has the high input  
impedance of a MOSFET and the low on-state conduction  
loss of a bipolar transistor. The much lower on-state voltage  
o
Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at T = 125 C  
J
• Low Conduction Loss  
o
o
drop varies only moderately between 25 C and 150 C. The  
IGBT used is the development type TA49343. The diode  
used in anti-parallel is the development type TA49373.  
Temperature Compensating SABER™ Model  
www.fairchildsemi.com  
This IGBT is ideal for many high voltage switching  
applications operating at high frequencies where low  
conduction losses are essential. This device has been  
optimized for high frequency switch mode power supplies.  
Packaging  
JEDEC STYLE TO-247  
E
C
G
Formerly Developmental Type TA49345.  
Ordering Information  
PART NUMBER  
PACKAGE  
BRAND  
30N60A4D  
COLLECTOR  
(FLANGE)  
HGTG30N60A4D  
TO-247  
NOTE: When ordering, use the entire part number.  
Symbol  
C
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2004 Fairchild Semiconductor Corporation  
HGTG30N60A4D Rev. B1  

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