生命周期: | Contact Manufacturer | Reach Compliance Code: | compliant |
风险等级: | 5.75 | 其他特性: | STANDARD: MIL-C-83503/6, SOLDERED DIRECTLY TO THE BOARD, LOW PROFILE |
主体/外壳类型: | PLUG | 连接器类型: | DIP CONNECTOR |
触点性别: | MALE | DIN 符合性: | NO |
滤波功能: | NO | IEC 符合性: | NO |
MIL 符合性: | YES | 混合触点: | NO |
安装类型: | CABLE | 装载的行数: | 2 |
选件: | GENERAL PURPOSE | 端接类型: | IDC |
触点总数: | 40 | UL 易燃性代码: | 94V-0 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDP40TGY | ADAM-TECH |
获取价格 |
DIP Connector, 40 Contact(s), 2 Row(s), Male, 0.1 inch Pitch, IDC Terminal, Gray Insulator | |
FDP42AN15A0 | FAIRCHILD |
获取价格 |
N-Channel PowerTrench MOSFET | |
FDP42AN15A0 | ONSEMI |
获取价格 |
N 沟道,Power Trench® MOSFET,150V,35A,42mΩ | |
FDP42AN15A0_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Met | |
FDP44N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FDP46N30 | FAIRCHILD |
获取价格 |
300V N-Channel MOSFET | |
FDP4D5N10C | ONSEMI |
获取价格 |
N-Channel Shielded Gate PowerTrench® MOSFET, | |
FDP4N60NZ | FAIRCHILD |
获取价格 |
N-Channel MOSFET 600V, 3.8A, 2.5Ω | |
FDP51N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FDP51N25 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,UniFETTM,250V,51A,60mΩ,TO-220 |