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FDP5500_F085 PDF预览

FDP5500_F085

更新时间: 2024-11-06 21:22:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
7页 422K
描述
Power Field-Effect Transistor, 80A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3

FDP5500_F085 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.7
雪崩能效等级(Eas):860 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):80 A最大漏极电流 (ID):80 A
最大漏源导通电阻:0.007 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):375 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDP5500_F085 数据手册

 浏览型号FDP5500_F085的Datasheet PDF文件第2页浏览型号FDP5500_F085的Datasheet PDF文件第3页浏览型号FDP5500_F085的Datasheet PDF文件第4页浏览型号FDP5500_F085的Datasheet PDF文件第5页浏览型号FDP5500_F085的Datasheet PDF文件第6页浏览型号FDP5500_F085的Datasheet PDF文件第7页 
April 2009  
FDP5500_F085  
N-Channel UltraFET Power MOSFET  
55V, 80A, 7mΩ  
Applications  
Features  
„ Typ rDS(on) = 5.1mat VGS = 10V, ID = 80A  
„ Typ Qg(10) = 114nC at VGS = 10V  
„ Simulation Models  
-Temperature Compensated PSPICE and SABERTM  
Models  
„ DC Linear Mode Control  
„ Solenoid and Motor Control  
„ Switching Regulators  
„ Automotive Systems  
„ Peak Current vs Pulse Width Curve  
„ UIS Rating Curve  
„ Qualified to AEC Q101  
„ RoHS Compliant  
Package  
Symbol  
D
DRAIN  
(FLANGE)  
SOURCE  
DRAIN  
GATE  
G
TO-220AB  
S
©2009 Fairchild Semiconductor Corporation  
1
www.fairchildsemi.com  
FDP5500_F085 Rev. A  

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