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FDP42AN15A0_NL PDF预览

FDP42AN15A0_NL

更新时间: 2024-11-06 21:02:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
11页 192K
描述
Power Field-Effect Transistor, 5A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

FDP42AN15A0_NL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.44雪崩能效等级(Eas):90 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (Abs) (ID):35 A
最大漏极电流 (ID):5 A最大漏源导通电阻:0.042 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDP42AN15A0_NL 数据手册

 浏览型号FDP42AN15A0_NL的Datasheet PDF文件第2页浏览型号FDP42AN15A0_NL的Datasheet PDF文件第3页浏览型号FDP42AN15A0_NL的Datasheet PDF文件第4页浏览型号FDP42AN15A0_NL的Datasheet PDF文件第5页浏览型号FDP42AN15A0_NL的Datasheet PDF文件第6页浏览型号FDP42AN15A0_NL的Datasheet PDF文件第7页 
September 2002  
FDP42AN15A0 / FDB42AN15A0  
®
N-Channel PowerTrench MOSFET  
150V, 35A, 42mΩ  
Features  
Applications  
rDS(ON) = 36m(Typ.), VGS = 10V, ID = 12A  
Qg(tot) = 33nC (Typ.), VGS = 10V  
Low Miller Charge  
DC/DC Converters and Off-line UPS  
Distributed Power Architectures and VRMs  
Primary Switch for 24V and 48V Systems  
High Voltage Synchronous Rectifier  
Direct Injection / Diesel Injection Systems  
42V Automotive Load Control  
Low Qrr Body Diode  
UIS Capability (Single Pulse and Repetitive Pulse)  
Qualified to AEC Q101  
Electronic Valve Train Systems  
Formerly developmental type 82864  
DRAIN  
(FLANGE)  
D
GATE  
SOURCE  
DRAIN  
GATE  
G
SOURCE  
TO-263AB  
DRAIN  
TO-220AB  
FDP SERIES  
S
(FLANGE)  
FDB SERIES  
MOSFET Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
VDSS  
VGS  
Parameter  
Ratings  
150  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
V
V
±20  
Continuous (TC = 25oC, VGS = 10V)  
Continuous (TC = 100oC, VGS = 10V)  
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)  
Pulsed  
35  
A
ID  
24  
5
A
A
Figure 4  
90  
EAS  
Single Pulse Avalanche Energy (Note 1)  
mJ  
Power dissipation  
Derate above 25oC  
150  
W
PD  
1.00  
W/oC  
oC  
TJ, TSTG  
Operating and Storage Temperature  
-55 to 175  
Thermal Characteristics  
RθJC  
RθJA  
RθJA  
Thermal Resistance Junction to Case TO-220,TO-263  
1.0  
62  
43  
oC/W  
oC/W  
oC/W  
Thermal Resistance Junction to Ambient TO-220,TO-263  
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area  
This product has been designed to meet the extreme test conditions and environment demanded by the automotive  
industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/  
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.  
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality  
systems certification.  
©2002 Fairchild Semiconductor Corporation  
FDP42AN15A0 / FDB42AN15A0 Rev. C  

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