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FDP5690 PDF预览

FDP5690

更新时间: 2024-11-05 22:40:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
16页 391K
描述
60V N-Channel PowerTrenchTM MOSFET

FDP5690 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.8
雪崩能效等级(Eas):80 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):32 A
最大漏极电流 (ID):32 A最大漏源导通电阻:0.027 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):58 W
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDP5690 数据手册

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July 2000  
FDP5690/FDB5690  
TM  
60V N-Channel PowerTrench MOSFET  
General Description  
Features  
• 32 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V  
This N-Channel MOSFET has been designed specifically  
to improve the overall efficiency of DC/DC converters  
using either synchronous or conventional switching PWM  
controllers.  
RDS(ON) = 0.032 @ VGS = 6 V.  
• Critical DC electrical parameters specified at evevated  
temperature.  
These MOSFETs feature faster switching and lower gate  
charge than other MOSFETs with comparable RDS(on)  
specifications resulting in DC/DC power supply designs  
with higher overall efficiency.  
• Rugged internal source-drain diode can eliminate the  
need for an external Zener diode transient suppressor.  
High performance trench technology for extremely low  
RDS(ON)  
.
• 175°C maximum junction temperature rating.  
D
D
G
G
G
TO-220  
FDP Series  
D
S
TO-263AB  
FDB Series  
S
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted  
FDP5690  
FDB5690  
Symbol  
Parameter  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
60  
V
V
A
±
Gate-Source Voltage  
Maximum Drain Current - Continuous  
- Pulsed  
20  
32  
100  
58  
PD  
°
Total Power Dissipation @ TC = 25 C  
W
°
°
W/ C  
Derate above 25 C  
0.4  
°
C
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-65 to +175  
Thermal Characteristics  
°
°
RθJC  
Thermal Resistance, Junction-to-Case  
2.6  
C/W  
C/W  
RθJA  
Thermal Resistance, Junction-to-Ambient  
62.5  
Package Marking and Ordering Information  
Device Marking  
Device  
FDB5690  
FDP5690  
Reel Size  
Tape Width  
Quantity  
800  
FDB5690  
13’’  
24mm  
N/A  
FDP5690  
Tube  
45  
2000 Fairchild Semiconductor International  
FDP5690/FDB5690Rev. C  

FDP5690 替代型号

型号 品牌 替代类型 描述 数据表
STP60NF06 STMICROELECTRONICS

功能相似

N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220F
STP120NF10 STMICROELECTRONICS

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N-CHANNEL 100V - 0.009 W - 120A DPAK/TO-220 STripFET II POWER MOSFET
STP55NF06 STMICROELECTRONICS

功能相似

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220

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