5秒后页面跳转
FDP5N50U_12 PDF预览

FDP5N50U_12

更新时间: 2024-09-16 11:59:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 392K
描述
N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω

FDP5N50U_12 数据手册

 浏览型号FDP5N50U_12的Datasheet PDF文件第2页浏览型号FDP5N50U_12的Datasheet PDF文件第3页浏览型号FDP5N50U_12的Datasheet PDF文件第4页浏览型号FDP5N50U_12的Datasheet PDF文件第5页浏览型号FDP5N50U_12的Datasheet PDF文件第6页浏览型号FDP5N50U_12的Datasheet PDF文件第7页 
May2012  
Ultra FRFETTM  
FDP5N50U / FDPF5N50UT  
tm  
N-Channel MOSFET, FRFET  
500V, 4A, 2.0Ω  
Features  
Description  
RDS(on) = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A  
Low gate charge ( Typ. 11nC)  
Low Crss ( Typ. 5pF)  
These N-Channel enhancement mode power field effect transis-  
tors are produced using Fairchild’s proprietary, planar stripe,  
DOMS technology.  
This advance technology has been especially tailored to mini-  
mize on-state resistance, provide superior switching perfor-  
mance, and withstand high energy pulse in the avalanche and  
commutationmode. These devices are well suited for high effi-  
cient switched mode power supplies and active power factor cor-  
rection.  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
RoHS compliant  
D
G
TO-220F  
FDPF Series  
TO-220  
FDP Series  
G D S  
G D S  
(potted)  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*  
Symbol  
VDSS  
VGSS  
Parameter  
FDP5N50U FDPF5N50UT Units  
Drain to Source Voltage  
Gate to Source Voltage  
500  
±30  
V
V
-Continuous (TC = 25oC)  
-Continuous (TC = 100oC)  
- Pulsed  
4
4*  
ID  
Drain Current  
A
2.4  
16  
2.4*  
16*  
IDM  
Drain Current  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
A
mJ  
A
EAS  
IAR  
Single Pulsed Avalanche Energy  
Avalanche Current  
216  
4
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
8.5  
20  
mJ  
V/ns  
W
(TC = 25oC)  
- Derate above 25oC  
85  
28  
PD  
Power Dissipation  
0.67  
0.22  
W/oC  
oC  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction to Case  
FDP5N50U FDPF5N50UT  
Units  
RθJC  
RθCS  
RθJA  
1.4  
0.5  
4.5  
-
Thermal Resistance, Case to Sink Typ.  
Thermal Resistance, Junction to Ambient  
oC/W  
62.5  
62.5  
©2012 Fairchild Semiconductor Corporation  
FDP5N50U / FDPF5N50UT Rev.C1  
1
www.fairchildsemi.com  

与FDP5N50U_12相关器件

型号 品牌 获取价格 描述 数据表
FDP5N60NZ ONSEMI

获取价格

N 沟道 UniFETTM II MOSFET 600V, 4A, 2Ω
FDP6021P FAIRCHILD

获取价格

20V P-Channel 1.8V Specified PowerTrench MOSFET
FDP6021PS62Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 28A I(D), 20V, 0.03ohm, 1-Element, P-Channel, Silicon, Meta
FDP6030 FAIRCHILD

获取价格

N-Channel Logic Level PowerTrench MOSFET
FDP6030BL FAIRCHILD

获取价格

N-Channel Logic Level PowerTrench MOSFET
FDP6030BL ONSEMI

获取价格

N 沟道逻辑电平 PowerTrench® MOSFET 30V,40A,18mΩ
FDP6030BLS62Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 40A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
FDP6030L FAIRCHILD

获取价格

N-Channel Logic Level Enhancement Mode Field Effect Transistor
FDP6030L_NL FAIRCHILD

获取价格

暂无描述
FDP6035AL FAIRCHILD

获取价格

N-Channel Logic Level PowerTrenchTM MOSFET