FDP6030

更新时间： 2024-11-20 22:40:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	383K
描述
N-Channel Logic Level PowerTrench MOSFET

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数据手册

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FDP6030 数据手册

July 2000

FDP6030BL/FDB6030BL

N-Channel Logic Level PowerTrench MOSFET

General Description

Features

This N-Channel Logic Level MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

• 40 A, 30 V. R_DS(ON)= 0.018 Ω @ V_GS= 10 V

R_DS(ON)= 0.024 Ω @ V_GS= 4.5 V.

• Critical DC electrical parameters specified at elevated

temperature.

These MOSFETs feature faster switching and lower gate

charge than other MOSFETs with comparable R_DS(on)

specifications resulting in DC/DC power supply designs

with higher overall efficiency.

• Rugged internal source-drain diode can eliminate the

need for an external Zener diode transient suppressor.

• High performance trench technology for

extremely low R_DS(ON)

• 175°C maximum junction temperature rating.

TO-220

FDP Series

TO-263AB

FDB Series

T_C= 25°C unless otherwise noted

Absolute Maximum Ratings

FDP6030BL FDB6030BL

Symbol

V_DSS

Parameter

Units

Drain-Source Voltage

Gate-Source Voltage

V_GSS

(Note 1)

I_D

Maximum Drain Current - Continuous

- Pulsed

120

P_D

Total Power Dissipation @ T_C= 25 C

0.36

Derate above 25 C

W/ C

T_J, T_STG

Operating and Storage Junction Temperature Range

-65 to +175

Thermal Characteristics

Thermal Resistance, Junction-to-Case

2.5

C/W

Thermal Resistance, Junction-to-Ambient

62.5

C/W

Package Marking and Ordering Information

Device Marking

FDB6030BL

Device

Reel Size

13’’

Tape Width

24mm

Quantity

800

FDB6030BL

FDP6030BL

Tube

N/A

200 Fairchild Semiconductor International

FDP6030BL/FDB6030BL Rev.C

12 3 4 5 6 7...10

中文翻译

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