Datasheet > FDP6670AS_08

FDP6670AS_08

更新时间： 2024-11-21 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	785K
描述
30V N-Channel PowerTrench㈢ SyncFET⑩

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FDP6670AS_08 数据手册

May 2008

FDP6670AS/FDB6670AS

30V N-Channel PowerTrench^®SyncFET^™

General Description

Features

This MOSFET is designed to replace a single MOSFET

and parallel Schottky diode in synchronous DC:DC

power supplies. This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

• 31 A, 30 V.

R_DS(ON)= 8.5 mΩ @ V_GS= 10 V

R_DS(ON)= 10.5 mΩ @ V_GS= 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge (28nC typical)

R_DS(ON)

and low gate charge.

The FDP6670AS

includes an integrated Schottky diode using Fairchild’s

monolithic SyncFET technology. The performance of

the FDP6670AS/FDB6670AS as the low-side switch in

a synchronous rectifier is indistinguishable from the

performance of the FDP6670A/FDB6670A in parallel

with a Schottky diode.

• High performance trench technology for extremely

low R_DS(ON)and fast switching

• High power and current handling capability

TO-263AB

FDB Series

TO-220

FDP Series

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

V_GSS

I_D

Gate-Source Voltage

±20

Drain Current – Continuous

– Pulsed

(Note 1)

150

P_D

W/°C

°C

Total Power Dissipation @ T_C= 25°C

62.5

Derate above 25°C

0.5

T_J, T_STG

T_L

Operating and Storage Junction Temperature Range

–55 to +150

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

°C

275

Thermal Characteristics

R_θJC

Thermal Resistance, Junction-to-Case

2.1

°C/W

R_θJA

Thermal Resistance, Junction-to-Ambient

62.5

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

24mm

Quantity

800 units

FDB6670AS

FDP6670AS

13’’

FDP6670AS

Tube

n/a

FDP6670AS/FDB6670AS Rev A2 (X)

12 3 4 5 6 7

中文翻译

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