FDP6676

更新时间： 2024-11-24 22:40:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	84K
描述
30V N-Channel Logic Level PowerTrench MOSFET

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中文翻译

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数据手册

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FDP6676 数据手册

April 2001

FDP6676/FDB6676

30V N-Channel Logic Level PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

• 42 A, 30 V.

R_DS(ON)= 6.0 mΩ @ V_GS= 10 V

_DS(ON)= 7.5 mΩ @ V_GS= 4.5 V

• Critical DC electrical parameters specified at

extremely low R_DS(ON)

elevated temperature

Applications

• High performance trench technology for extremely

low R_DS(ON)

• Synchronous rectifier

• DC/DC converter

• 175°C maximum junction temperature rating

TO-263AB

FDB Series

TO-220

FDP Series

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 16

I_D

Drain Current – Continuous

– Pulsed

(Note 1)

240

P_D

W°C

°C

Total Power Dissipation @ T_C= 25°C

0.48

Derate above 25°C

Operating and Storage Junction Temperature Range

T_J, T_STG

-65 to +175

Thermal Characteristics

R_θJC

Thermal Resistance, Junction-to-Case

1.6

°C/W

R_θJA

Thermal Resistance, Junction-to-Ambient

62.5

Package Marking and Ordering Information

Device Marking

FDP6676

Device

FDP6676

FDB6676

Reel Size

Tube

Tape width

n/a

24mm

Quantity

800 units

FDB6676

13”

FDP6676/FDB6676 Rev C(W)

2000 Fairchild Semiconductor Corporation

12 3 4 5

中文翻译

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