Datasheet > FDP7045L_04

FDP7045L_04

更新时间： 2024-02-25 19:05:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	111K
描述
N-Channel Logic Level PowerTrench MOSFET

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FDP7045L_04 数据手册

March 2004

FDP7045L/FDB7045L

N-Channel Logic Level PowerTrench^ÒMOSFET

General Description

Features

This N-Channel Logic Level MOSFET has been

designed specifically to improve the overall efficiency of

DC/DC converters using either synchronous or

conventional switching PWM controllers.

100 A, 30 V

R_DS(ON)= 4.5 mW @ V_GS= 10 V

R_DS(ON)= 6.0 mW @ V_GS= 4.5 V

Critical DC electrical parameters specified at

elevated temperature

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

R_DS(ON)specifications resulting in DC/DC power supply

designs with higher overall efficiency.

High performance trench technology for extremely

low R_DS(ON)

175°C maximum junction temperature rating

TO-263AB

FDB Series

TO-220

FDP Series

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 20

I_D

Drain Current – Continuous

(Note 1)

100

– Pulsed

300

P_D

107

W/°C

°C

Total Power Dissipation @ T_C= 25°C

0.7

Derate above 25°C

Operating and Storage Junction Temperature Range

T_J, T_STG

–55 to +175

Thermal Characteristics

R_qJC

Thermal Resistance, Junction-to-Case

1.4

°C/W

R_qJA

Thermal Resistance, Junction-to-Ambient

62.5

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

24mm

Quantity

FDB7045L

FDP7045L

13’’

800 units

FDP7045L

Tube

n/a

FDP7045L/FDB7045L Rev D1(W)

Ó2004 Fairchild Semiconductor Corporation

12 3 4 5

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