Datasheet > FDP7030BL

FDP7030BL

更新时间： 2023-09-03 20:34:23

品牌	Logo	应用领域
安森美 - ONSEMI		局域网 PC 开关脉冲晶体管
页数	文件大小	规格书
7页	229K
描述
N 沟道逻辑电平 PowerTrench® MOSFET 30V，60A，9mΩ

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技术参数
数据手册

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FDP7030BL 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TO-220AB
包装说明：	TO-220, 3 PIN	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.32
Is Samacsys：	N	其他特性：	LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）：	73 mJ	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (ID)：	60 A
最大漏源导通电阻：	0.009 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3	湿度敏感等级：	NOT APPLICABLE
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT APPLICABLE	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	180 A	认证状态：	COMMERCIAL
表面贴装：	NO	端子面层：	MATTE TIN
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT APPLICABLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FDP7030BL 数据手册

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与FDP7030BL相关器件

型号	品牌	获取价格	描述	数据表
FDP7030BL_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
FDP7030BLS	FAIRCHILD	获取价格	30V N-Channel PowerTrench㈢SyncFET⑩
FDP7030BLS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
FDP7030BLSJ69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Me
FDP7030BLSS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Me
FDP7030L	FAIRCHILD	获取价格	N-Channel Logic Level Enhancement Mode Field Effect Transistor
FDP7030L_NL	FAIRCHILD	获取价格	暂无描述
FDP7030LJ69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Met
FDP7030LS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Met
FDP7042L	FAIRCHILD	获取价格	N-Channel Logic Level PowerTrench MOSFET

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