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FDP7030BL PDF预览

FDP7030BL

更新时间: 2024-02-09 18:17:54
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
5页 113K
描述
N-Channel Logic Level PowerTrenchTM MOSFET

FDP7030BL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.32
Is Samacsys:N其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):114 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):80 A
最大漏源导通电阻:0.007 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:NOT SPECIFIED
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):240 A认证状态:COMMERCIAL
表面贴装:NO端子面层:TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDP7030BL 数据手册

 浏览型号FDP7030BL的Datasheet PDF文件第2页浏览型号FDP7030BL的Datasheet PDF文件第3页浏览型号FDP7030BL的Datasheet PDF文件第4页浏览型号FDP7030BL的Datasheet PDF文件第5页 
October 2003  
FDP7030BL/FDB7030BL  
N-Channel Logic Level PowerTrenchÒ MOSFET  
General Description  
Features  
This N-Channel Logic Level MOSFET has been  
designed specifically to improve the overall efficiency of  
DC/DC converters using either synchronous or  
conventional switching PWM controllers.  
·
·
·
·
60 A, 30 V  
RDS(ON) = 9 mW @ VGS = 10 V  
RDS(ON) = 12 mW @ VGS = 4.5 V  
Critical DC electrical parameters specified at  
elevated temperature  
These MOSFETs feature faster switching and lower  
gate charge than other MOSFETs with comparable  
RDS(ON) specifications.  
High performance trench technology for extremely  
low RDS(ON)  
The result is a MOSFET that is easy and safer to drive  
(even at very high frequencies), and DC/DC power  
supply designs with higher overall efficiency.  
175°C maximum junction temperature rating  
It has been optimized for low gate charge, low RDS(ON)  
and fast switching speed.  
D
D
G
G
G
S
TO-263AB  
FDB Series  
TO-220  
FDP Series  
D
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
30  
V
V
A
VGSS  
Gate-Source Voltage  
± 20  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1)  
(Note 1)  
60  
180  
PD  
60  
W
W/°C  
°C  
Total Power Dissipation @ TC = 25°C  
0.4  
Derate above 25°C  
Operating and Storage Junction Temperature Range  
TJ, TSTG  
–65 to +175  
Thermal Characteristics  
RqJC  
Thermal Resistance, Junction-to-Case  
2.5  
°C/W  
°C/W  
RqJA  
Thermal Resistance, Junction-to-Ambient  
62.5  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
24mm  
Quantity  
FDB7030BL  
FDB7030BL  
FDP7030BL  
13’’  
800 units  
45  
FDP7030BL  
Tube  
n/a  
FDP7030BL/FDB7030BL Rev D1(W)  
Ó2003 Fairchild Semiconductor Corporation  

FDP7030BL 替代型号

型号 品牌 替代类型 描述 数据表
STP90NF03L STMICROELECTRONICS

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N-CHANNEL 30V - 0.0056ohm - 90A TO-220/I2PAK

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