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FDP7030BL_NL PDF预览

FDP7030BL_NL

更新时间: 2024-01-05 23:52:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 109K
描述
Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FDP7030BL_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.32
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):73 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):60 A最大漏极电流 (ID):60 A
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):65 W最大脉冲漏极电流 (IDM):180 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDP7030BL_NL 数据手册

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October 2003  
FDP7030BL/FDB7030BL  
N-Channel Logic Level PowerTrenchÒ MOSFET  
General Description  
Features  
This N-Channel Logic Level MOSFET has been  
designed specifically to improve the overall efficiency of  
DC/DC converters using either synchronous or  
conventional switching PWM controllers.  
·
·
·
·
60 A, 30 V  
RDS(ON) = 9 mW @ VGS = 10 V  
RDS(ON) = 12 mW @ VGS = 4.5 V  
Critical DC electrical parameters specified at  
elevated temperature  
These MOSFETs feature faster switching and lower  
gate charge than other MOSFETs with comparable  
RDS(ON) specifications.  
High performance trench technology for extremely  
low RDS(ON)  
The result is a MOSFET that is easy and safer to drive  
(even at very high frequencies), and DC/DC power  
supply designs with higher overall efficiency.  
175°C maximum junction temperature rating  
It has been optimized for low gate charge, low RDS(ON)  
and fast switching speed.  
D
D
G
G
G
S
TO-263AB  
FDB Series  
TO-220  
FDP Series  
D
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
30  
V
V
A
VGSS  
Gate-Source Voltage  
± 20  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1)  
(Note 1)  
60  
180  
PD  
60  
W
W/°C  
°C  
Total Power Dissipation @ TC = 25°C  
0.4  
Derate above 25°C  
Operating and Storage Junction Temperature Range  
TJ, TSTG  
–65 to +175  
Thermal Characteristics  
RqJC  
Thermal Resistance, Junction-to-Case  
2.5  
°C/W  
°C/W  
RqJA  
Thermal Resistance, Junction-to-Ambient  
62.5  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
24mm  
Quantity  
FDB7030BL  
FDB7030BL  
FDP7030BL  
13’’  
800 units  
45  
FDP7030BL  
Tube  
n/a  
FDP7030BL/FDB7030BL Rev D1(W)  
Ó2003 Fairchild Semiconductor Corporation  

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