April 2007
TM
UniFET
FDP79N15 / FDPF79N15
150V N-Channel MOSFET
Features
Description
•
•
•
•
•
79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V
Low gate charge ( typical 56 nC)
Low Crss ( typical 96pF)
Fast switching
Improved dv/dt capability
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
TO-220F
FDPF Series
TO-220
FDP Series
G D
S
G
D S
S
Absolute Maximum Ratings
Symbol
Parameter
FDP79N15 FDPF79N15
Unit
VDSS
Drain-Source Voltage
Drain Current
150
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
79
50
79*
50*
A
A
(Note 1)
IDM
Drain Current
- Pulsed
A
316
316*
VGSS
EAS
IAR
Gate-Source voltage
± 30
1669
79
V
mJ
A
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
46.3
4.5
mJ
V/ns
Power Dissipation
(TC = 25°C)
- Derate above 25°C
463
3.7
38
0.3
W
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP79N15 FDPF79N15
Unit
°C/W
°C/W
°C/W
RθJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
0.27
0.5
3.3
--
RθCS
RθJA
62.5
62.5
©2007 Fairchild Semiconductor Corporation
FDP79N15 / FDPF79N15 Rev. B
1
www.fairchildsemi.com