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FDP7080J69Z PDF预览

FDP7080J69Z

更新时间: 2024-09-24 19:47:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 183K
描述
Power Field-Effect Transistor, 75A I(D), 80V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

FDP7080J69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84雪崩能效等级(Eas):555 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:80 V
最大漏极电流 (ID):75 A最大漏源导通电阻:0.012 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):230 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDP7080J69Z 数据手册

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March 2002  
FDP7080/FDB7080  
80V N-Channel PowerTrenchMOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers.  
75 A, 80 V.  
RDS(ON) = 12 m@ VGS = 10 V  
DS(ON) = 15 m@ VGS = 5 V  
R
Fast switching speed  
This MOSFET features faster switching and lower gate  
charge than other MOSFETs with comparable RDS(ON)  
specifications resulting in DC/DC power supply designs  
with higher overall efficiency.  
High performance trench technology for extremely  
low RDS(ON)  
High power and current handling capability  
.
D
D
G
G
G
S
TO-263AB  
TO-220  
D
FDP Series  
FDB Series  
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
80  
20  
V
V
A
VGSS  
Gate-Source Voltage  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1)  
(Note 1)  
75  
230  
PD  
125  
0.85  
65 to +175  
W
W°C  
°C  
Total Power Dissipation @ TC = 25°C  
Derate above 25°C  
Operating and Storage Junction Temperature Range  
TJ, TSTG  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
1.2  
62.5  
°C/W  
Package Marking and Ordering Information  
Device Marking  
FDP7080  
Device  
FDP7080  
FDB7080  
Reel Size  
Tube  
Tape width  
n/a  
24mm  
Quantity  
45 units  
FDB7080  
13”  
800 units  
FDP7080/FDB7080 Rev C(W)  
2002 Fairchild Semiconductor Corporation  

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