FDP7N60NZ

更新时间： 2024-09-24 12:27:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	354K
描述
N-Channel UniFETTM II MOSFET

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数据手册

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FDP7N60NZ 数据手册

March 2013

FDP7N60NZ / FDPF7N60NZ

N-Channel UniFET II MOSFET

600 V, 6.5 A, 1.25 

Features

Description

UniFET^TMII MOSFET is Fairchild Semiconductor^®’s high volt-

age MOSFET family based on advanced planar stripe and

DMOS technology. This advanced MOSFET family has the

smallest on-state resistance among the planar MOSFET, and

also provides superior switching performance and higher ava-

lanche energy strength. In addition, internal gate-source ESD

diode allows UniFET II MOSFET to withstand over 2kV HBM

surge stress. This device family is suitable for switching power

converter applications such as power factor correction (PFC), flat

panel display (FPD) TV power, ATX and electronic lamp ballasts.

•

R_DS(on)= 1.05  (Typ.) @ V_GS= 10 V, I_D= 3.25 A

Low Gate Charge (Typ. 13 nC)

Low C_rss(Typ. 7 pF)

100% Avalanche Tested

Improved dv/dt Capability

ESD Improved Capability

RoHS Compliant

Applications

•

LCD/LED TV

Lighting

Uninterruptible Power Supply

AC-DC Power Supply

TO-220

TO-220F

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

FDPF7N60NZ

600

Symbol

V_DSS

V_GSS

Parameter

FDP7N60NZ

Unit

Drain to Source Voltage

Gate to Source Voltage

±30

- Continuous (T_C= 25^oC)

- Continuous (T_C= 100^oC)

- Pulsed

6.5

3.9

6.5*

3.9*

26*

I_D

Drain Current

I_DM

Drain Current

(Note 1)

(Note 2)

(Note 1)

(Note 3)

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

275

6.5

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

14.7

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

147

1.2

P_D

Power Dissipation

0.26

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

^oC

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

R_JC

Parameter

FDP7N60NZ FDPF7N60NZ

Unit

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Case to Sink, Typ.

0.85

0.5

3.8

R_CS

R_JA

^oC/W

Thermal Resistance, Junction to Ambient, Max.

62.5

FDP7N60NZ / FDPF7N60NZ Rev. C0

www.fairchildsemi.com

12 3 4 5 6 7...10

中文翻译

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