Datasheet > FDP8440

FDP8440

更新时间： 2024-09-25 17:15:47

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	777K
描述
种类:N-Channel;漏源电压（Vdss）:40V;持续漏极电流（Id）（在25°C时）:80A;Vgs(th)(V):±20;漏源导通电阻:2.2mΩ@10V

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FDP8440 数据手册

FDP8440

UMW

40 V

N-Channel

MOSFET

Features

•

V_DS(V) =40V

•

I_D=80A (V_GS= 10V)

R_DS(ON)<2.2mΩ (V _GS=10V)

R_DS(ON)<2.4mΩ (V _GS=4.5V)

• Low Miller Charge

• Low Q_rrBody Diode

Applications

• Power Tools

• Motor Drives and Uninterruptible Power Supplies

• Synchronous Rectification

• Battery Protection Circuit

= 25 C unless otherwise noted

MOSFET Maximum Ratings

Symbol

Parameter

FDP8440

Unit

V_DSS

V_GSS

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

- Continuous (T_C= 25^oC, Silicon Limited)

- Continuous (T_C= 100^oC, Silicon Limited)

- Continuous (T_C= 25^oC, Package Limited)

277*

196*

100

I_D

I_DM

Drain Current

- Pulsed

(Note 1)

(Note 2)

500

1682

E_AS

Single Pulsed Avalanche Energy

(T_C= 25^oC)

- Derate above 25^oC

306

P_D

Power Dissipation

2.04

W/^oC

^oC

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to +175

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

R_θJC

R_θCS

R_θJA

Thermal Resistance, Junction to Case, Max.

0.49

0.5

^oC/W

Thermal Resistance, Case to Sink (Typ.)

Thermal Resistance, Junction to Ambient, Max.

62.5

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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