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FDP79N15 PDF预览

FDP79N15

更新时间: 2024-02-03 18:26:21
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 1295K
描述
150V N-Channel MOSFET

FDP79N15 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.36
其他特性:FAST SWITCHING雪崩能效等级(Eas):1669 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (ID):79 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:NOT APPLICABLE元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):316 A
认证状态:COMMERCIAL表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDP79N15 数据手册

 浏览型号FDP79N15的Datasheet PDF文件第2页浏览型号FDP79N15的Datasheet PDF文件第3页浏览型号FDP79N15的Datasheet PDF文件第4页浏览型号FDP79N15的Datasheet PDF文件第5页浏览型号FDP79N15的Datasheet PDF文件第6页浏览型号FDP79N15的Datasheet PDF文件第7页 
May 2006  
TM  
UniFET  
FDP79N15 / FDPF79N15  
150V N-Channel MOSFET  
Features  
Description  
79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V  
Low gate charge ( typical 56 nC)  
Low Crss ( typical 96pF)  
Fast switching  
Improved dv/dt capability  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche  
and commutation mode. These devices are well suited for high  
efficient switched mode power supplies and active power factor  
correction.  
D
G
TO-220F  
FDPF Series  
TO-220  
FDP Series  
G D  
S
G
D S  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
FDP79N15 FDPF79N15  
Unit  
VDSS  
Drain-Source Voltage  
Drain Current  
150  
V
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
79  
50  
79*  
50*  
A
A
(Note 1)  
IDM  
Drain Current  
- Pulsed  
A
316  
316*  
VGSS  
EAS  
IAR  
Gate-Source voltage  
± 30  
1669  
79  
V
mJ  
A
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
46.3  
4.5  
mJ  
V/ns  
Power Dissipation  
(TC = 25°C)  
- Derate above 25°C  
463  
3.7  
31  
0.25  
W
W/°C  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
300  
°C  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
°C  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
FDP79N15 FDPF79N15  
Unit  
°C/W  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
0.27  
62.5  
--  
62.5  
©2006 Fairchild Semiconductor Corporation  
FDP79N15 / FDPF79N15 Rev. A  
1
www.fairchildsemi.com  

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