Datasheet > FDP7042LJ69Z

FDP7042LJ69Z

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	96K
描述
Power Field-Effect Transistor, 50A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

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FDP7042LJ69Z 数据手册

April 2001

FDP7042L / FDB7042L

N-Channel Logic Level PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

• 50 A, 30 V.

R_DS(ON)= 9 mΩ @ V_GS= 4.5 V

_DS(ON)= 7.5 mΩ @ V_GS= 10 V

• Critical DC electrical parameters specified at

extremely low R_DS(ON)

elevated temperature

Applications

• High performance trench technology for extremely

low R_DS(ON)

• Synchronous rectifier

• DC/DC converter

• 175°C maximum junction temperature rating

TO-263AB

FDB Series

TO-220

FDP Series

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 12

I_D

Drain Current – Continuous

– Pulsed

(Note 1)

150

P_D

W°C

°C

Total Power Dissipation @ T_C= 25°C

0.48

Derate above 25°C

Operating and Storage Junction Temperature Range

T_J, T_STG

-65 to +175

Thermal Characteristics

R_θJC

Thermal Resistance, Junction-to-Case

1.8

°C/W

R_θJA

Thermal Resistance, Junction-to-Ambient

62.5

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

24mm

Quantity

FDB7042L

FDP7042L

13’’

800 units

FDP7042L

Tube

n/a

FDP7042L Rev C(W)

2000 Fairchild Semiconductor Corporation

12 3 4 5

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