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FDP7030BLSJ69Z PDF预览

FDP7030BLSJ69Z

更新时间: 2024-02-03 15:13:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 83K
描述
Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

FDP7030BLSJ69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.71配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):56 A
最大漏源导通电阻:0.0105 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:100 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):160 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDP7030BLSJ69Z 数据手册

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May 2001  
FDP7030BLS / FDB7030BLS  
30V N-Channel PowerTrenchÒ SyncFET™  
General Description  
Features  
This MOSFET is designed to replace a single MOSFET  
and parallel Schottky diode in synchronous DC:DC  
power supplies. This 30V MOSFET is designed to  
maximize power conversion efficiency, providing a low  
·
56 A, 30 V.  
RDS(ON) = 10.5 mW @ VGS = 10 V  
RDS(ON) = 16.5 mW @ VGS = 4.5 V  
·
·
·
Includes SyncFET Schottky body diode  
Low gate charge (15nC typical)  
RDS(ON)  
and low gate charge.  
The FDP7030BLS  
includes an integrated Schottky diode using Fairchild’s  
monolithic SyncFET technology. The performance of  
the FDP7030BLS as the low-side switch in  
a
synchronous rectifier is indistinguishable from the  
High performance trench technology for extremely  
low RDS(ON) and fast switching  
performance of the FDP7030BL in parallel with  
Schottky diode.  
a
·
High power and current handling capability  
D
D
G
G
G
S
TO-263AB  
FDB Series  
TO-220  
D
FDP Series  
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
30  
V
VGSS  
ID  
Gate-Source Voltage  
V
±20  
56  
Drain Current – Continuous  
(Note 1)  
(Note 1)  
A
– Pulsed  
160  
65  
PD  
W
Total Power Dissipation @ T = 25°C  
C
Derate above 25°C  
W/°C  
°C  
0.43  
TJ, TSTG  
TL  
Operating and Storage Junction Temperature Range  
–65 to +100  
Maximum lead temperature for soldering purposes,  
1/8” from case for 5 seconds  
°C  
275  
Thermal Characteristics  
RqJC  
Thermal Resistance, Junction-to-Case  
2.3  
°C/W  
°C/W  
RqJA  
Thermal Resistance, Junction-to-Ambient  
62.5  
Package Marking and Ordering Information  
Device Marking  
FDB7030BLS  
FDP7030BLS  
Device  
Reel Size  
Tape width  
24mm  
Quantity  
FDB7030BLS  
FDP7030BLS  
13’’  
800 units  
45  
Tube  
n/a  
FDP7030BLS Rev B(W)  
Ó 2001 Fairchild Semiconductor Corporation  

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