5秒后页面跳转
FDP6670AL-OLDDIE PDF预览

FDP6670AL-OLDDIE

更新时间: 2024-11-09 21:22:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 156K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

FDP6670AL-OLDDIE 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84配置:Single
最大漏极电流 (Abs) (ID):80 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):68 W
子类别:FET General Purpose Power表面贴装:NO
Base Number Matches:1

FDP6670AL-OLDDIE 数据手册

 浏览型号FDP6670AL-OLDDIE的Datasheet PDF文件第2页浏览型号FDP6670AL-OLDDIE的Datasheet PDF文件第3页浏览型号FDP6670AL-OLDDIE的Datasheet PDF文件第4页浏览型号FDP6670AL-OLDDIE的Datasheet PDF文件第5页 
May 2003  
FDP6670AL/FDB6670AL  
N-Channel Logic Level PowerTrenchÒ MOSFET  
General Description  
Features  
This N-Channel Logic Level MOSFET has been  
designed specifically to improve the overall efficiency of  
DC/DC converters using either synchronous or  
conventional switching PWM controllers.  
·
·
·
·
80 A, 30 V  
RDS(ON) = 6.5 mW @ VGS = 10 V  
RDS(ON) = 8.5 mW @ VGS = 4.5 V  
Critical DC electrical parameters specified at  
elevated temperature  
These MOSFETs feature faster switching and lower  
gate charge than other MOSFETs with comparable  
RDS(ON) specifications.  
High performance trench technology for extremely  
low RDS(ON)  
The result is a MOSFET that is easy and safer to drive  
(even at very high frequencies), and DC/DC power  
supply designs with higher overall efficiency.  
175°C maximum junction temperature rating  
It has been optimized for low gate charge, low RDS(ON)  
and fast switching speed.  
D
D
G
G
G
S
TO-263AB  
FDB Series  
TO-220  
FDP Series  
D
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
30  
V
V
A
VGSS  
Gate-Source Voltage  
± 20  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1)  
(Note 1)  
80  
240  
PD  
68  
W
W/°C  
°C  
Total Power Dissipation @ TC = 25°C  
0.45  
Derate above 25°C  
Operating and Storage Junction Temperature Range  
TJ, TSTG  
–65 to +175  
Thermal Characteristics  
RqJC  
Thermal Resistance, Junction-to-Case  
2.2  
°C/W  
°C/W  
RqJA  
Thermal Resistance, Junction-to-Ambient  
62.5  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
24mm  
Quantity  
FDB6670AL  
FDB6670AL  
FDP6670AL  
13’’  
800 units  
45  
FDP6670AL  
Tube  
n/a  
FDP6670AL/FDB6670AL Rev D(W)  
Ó2003 Fairchild Semiconductor Corporation  

与FDP6670AL-OLDDIE相关器件

型号 品牌 获取价格 描述 数据表
FDP6670ALS62Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me
FDP6670AS FAIRCHILD

获取价格

30V N-Channel PowerTrench SyncFET
FDP6670AS_08 FAIRCHILD

获取价格

30V N-Channel PowerTrench㈢ SyncFET⑩
FDP6670AS_NL FAIRCHILD

获取价格

30V N-Channel PowerTrench SyncFET
FDP6670S FAIRCHILD

获取价格

30V N-Channel PowerTrench? SyncFET
FDP6670SJ69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Me
FDP6676 FAIRCHILD

获取价格

30V N-Channel Logic Level PowerTrench MOSFET
FDP6676J69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
FDP6676S FAIRCHILD

获取价格

30V N-Channel PowerTrench SyncFET⑩
FDP6676SJ69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 76A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me