是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 80 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 68 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDP6670ALS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me | |
FDP6670AS | FAIRCHILD |
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30V N-Channel PowerTrench SyncFET | |
FDP6670AS_08 | FAIRCHILD |
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30V N-Channel PowerTrench㈢ SyncFET⑩ | |
FDP6670AS_NL | FAIRCHILD |
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30V N-Channel PowerTrench SyncFET | |
FDP6670S | FAIRCHILD |
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30V N-Channel PowerTrench? SyncFET | |
FDP6670SJ69Z | FAIRCHILD |
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Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Me | |
FDP6676 | FAIRCHILD |
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30V N-Channel Logic Level PowerTrench MOSFET | |
FDP6676J69Z | FAIRCHILD |
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Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met | |
FDP6676S | FAIRCHILD |
获取价格 |
30V N-Channel PowerTrench SyncFET⑩ | |
FDP6676SJ69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 76A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me |