FDP5800

更新时间： 2024-11-21 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	610K
描述
N-Channel Logic Level PowerTrench MOSFET

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中文翻译

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数据手册

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FDP5800 数据手册

November 2006

FDP5800

N-Channel Logic Level PowerTrench^®MOSFET

60V,80A, 6mΩ

Features

Applications

•

R_DS(on)= 4.6mΩ (Typ.), V_GS= 10V, I_D= 80A

High performance trench technology for extermly low Rdson

Low gate Charge

•

Motor/ Body Load Control

Power Train Management

Injection Systems

High power and current handing capability

RoHs Compliant

DC-AC Converters and UPS

TO-220

FDP Series

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

Ratings

Units

Drain-Source Voltage

Gate-Source Voltage

±20

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

-Continuous (T_A= 25^oC)

I_D

D r a in C u r r e n t

80*

I_DM

Drain Current

- Pulsed

320

652

E_AS

Single Pulsed Avalanche Energy

(Note 1)

Power Dissipation

(T_C= 25^oC)

- Derate above 25^oC

Operating and Storage Temperature Range

242

1.61

W/°C

P_D

T_J, T_STG

-55 to +175

°C

*Drain current limited by package

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance , Junction to Case

Thermal Resistance , Junction to Ambient, 1in²copper pad area

0.62

°C/W

Thermal Resistance , Junction to Ambient

62.5

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDP5800

TO220

FDP5800 Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

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