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FDP5800

更新时间： 2024-09-17 11:15:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 682K
描述
N 沟道逻辑电平 PowerTrench® MOSFET 60V，80A，6mΩ

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中文翻译

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FDP5800 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-XSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：4 weeks风险等级：0.97
雪崩能效等级（Eas）：652 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：80 A
最大漏极电流 (ID)：80 A最大漏源导通电阻：0.0126 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：242 W最大脉冲漏极电流 (IDM)：320 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
Base Number Matches：1

FDP5800 数据手册

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