Datasheet > FDP51N25_08

FDP51N25_08

更新时间： 2024-11-21 03:02:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	1324K
描述
250V N-Channel MOSFET

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FDP51N25_08 数据手册

July 2008

UniFET^TM

FDP51N25 / FDPF51N25

250V N-Channel MOSFET

Features

Description

•

51A, 250V, R_DS(on)= 0.06Ω @V_GS= 10 V

Low gate charge ( typical 55 nC)

Low Crss ( typical 63 pF)

Fast switching

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

Improved dv/dt capability

TO-220F

FDPF Series

TO-220

FDP Series

G D

D S

Absolute Maximum Ratings

Symbol

Parameter

FDP51N25 FDPF51N25

Unit

V_DSS

Drain-Source Voltage

Drain Current

250

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

51*

30*

(Note 1)

I_DM

Drain Current

- Pulsed

204

204*

V_GSS

E_AS

I_AR

Gate-Source voltage

± 30

1111

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

4.5

Power Dissipation

(T_C= 25°C)

- Derate above 25°C

320

3.7

0.3

W/°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

FDP51N25 FDPF51N25

Unit

°C/W

°C/WJ

R_θJC

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

0.39

0.5

3.3

R_θCS

R_θJA

62.5

www.fairchildsemi.com

FDP51N25 / FDPF51N25 Rev. B

12 3 4 5 6 7...10

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