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FDP55N06 PDF预览

FDP55N06

更新时间: 2024-11-05 22:17:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 1180K
描述
60V N-Channel MOSFET

FDP55N06 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:4.46
其他特性:AVALANCHE RATED雪崩能效等级(Eas):480 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):55 A最大漏极电流 (ID):55 A
最大漏源导通电阻:0.022 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):114 W最大脉冲漏极电流 (IDM):220 A
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDP55N06 数据手册

 浏览型号FDP55N06的Datasheet PDF文件第2页浏览型号FDP55N06的Datasheet PDF文件第3页浏览型号FDP55N06的Datasheet PDF文件第4页浏览型号FDP55N06的Datasheet PDF文件第5页浏览型号FDP55N06的Datasheet PDF文件第6页浏览型号FDP55N06的Datasheet PDF文件第7页 
TM  
UniFET  
FDP55N06/FDPF55N06  
60V N-Channel MOSFET  
Features  
Description  
55A, 60V, RDS(on) = 0.022 @VGS = 10 V  
Low gate charge ( typical 30 nC)  
Low Crss ( typical 60 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche  
and commutation mode. These devices are well suited for high  
efficient switched mode power supplies, active power factor  
correction, electronic lamp ballast based on half bridge  
topology.  
D
G
TO-220F  
FDPF Series  
TO-220  
FDP Series  
G D  
S
G
D S  
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
VDSS  
Parameter  
FDP55N06  
FDPF55N06  
Units  
V
Drain-Source Voltage  
60  
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
Drain Current  
55  
55 *  
34.8 *  
220 *  
A
34.8  
220  
A
IDM  
(Note 1)  
Drain Current  
A
VGSS  
EAS  
IAR  
Gate-Source Voltage  
± 25  
480  
55  
V
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
EAR  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TC = 25°C)  
11.4  
4.5  
mJ  
V/ns  
W
dv/dt  
PD  
114  
0.9  
48  
- Derate above 25°C  
Operating and Storage Temperature Range  
0.4  
W/°C  
°C  
TJ, TSTG  
TL  
-55 to +150  
300  
Maximum lead temperature for soldering purposes,  
°C  
1/8from case for 5 seconds  
* Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
RθJC  
Parameter  
FDP55N06  
FDPF55N06  
Units  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink Typ.  
Thermal Resistance, Junction-to-Ambient  
1.1  
0.5  
2.58  
--  
RθJS  
RθJA  
62.5  
62.5  
©2005 Fairchild Semiconductor Corporation  
FDP55N06/FDPF55N06 Rev. A  
1
www.fairchildsemi.com  

FDP55N06 替代型号

型号 品牌 替代类型 描述 数据表
STP60NF06 STMICROELECTRONICS

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