Datasheet > FDP4D5N10C

FDP4D5N10C

更新时间： 2024-11-07 11:15:11

品牌	Logo	应用领域
安森美 - ONSEMI		栅
页数	文件大小	规格书
8页	1018K
描述
N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ

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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

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for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

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与FDP4D5N10C相关器件

型号	品牌	获取价格	描述	数据表
FDP4N60NZ	FAIRCHILD	获取价格	N-Channel MOSFET 600V, 3.8A, 2.5Î©
FDP51N25	FAIRCHILD	获取价格	250V N-Channel MOSFET
FDP51N25	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM，250V，51A，60mΩ，TO-220
FDP51N25_08	FAIRCHILD	获取价格	250V N-Channel MOSFET
FDP52N20	FAIRCHILD	获取价格	N-Channel MOSFET 200V, 52A, 0.049ヘ
FDP52N20	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM，200V，52A，49mΩ，TO-220
FDP5500	FAIRCHILD	获取价格	N-Channel UltraFET Power MOSFET 55V, 80A, 7mÎ
FDP5500_F085	FAIRCHILD	获取价格	Power Field-Effect Transistor, 80A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Met
FDP5500-F085	FAIRCHILD	获取价格	N-Channel UltraFET Power MOSFET 55V, 80A, 7mÎ
FDP5500-F085	ONSEMI	获取价格	N 沟道，UltraFET 功率 MOSFET，55V，80A，7mΩ

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