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FDP4N60NZ PDF预览

FDP4N60NZ

更新时间: 2024-11-06 12:23:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 383K
描述
N-Channel MOSFET 600V, 3.8A, 2.5Ω

FDP4N60NZ 数据手册

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December 2011  
UniFET-IITM  
FDP4N60NZ / FDPF4N60NZ  
N-Channel MOSFET  
600V, 3.8A, 2.5Ω  
Features  
RDS(on) = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A  
Low Gate Charge ( Typ. 8.3nC)  
Low Crss ( Typ. 3.7pF)  
Description  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
Fast Switching  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche  
and commutation mode. These devices are well suited for high  
efficient switching mode power supplies and active power factor  
correction.  
100% Avalanche Tested  
Improved dv/dt Capability  
ESD Improved Capability  
RoHS Compliant  
D
G
TO-220F  
FDPF Series  
TO-220  
FDP Series  
G D S  
G D S  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*  
Symbol  
VDSS  
VGSS  
Parameter  
FDP4N60NZ FDPF4N60NZ  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
600  
±25  
V
V
-Continuous (TC = 25oC)  
-Continuous (TC = 100oC)  
- Pulsed  
3.8  
2.3  
15  
3.8*  
2.3*  
15*  
ID  
Drain Current  
A
IDM  
Drain Current  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
A
mJ  
A
EAS  
IAR  
Single Pulsed Avalanche Energy  
Avalanche Current  
223.8  
3.8  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
8.9  
mJ  
V/ns  
W
W/oC  
oC  
10  
(TC = 25oC)  
- Derate above 25oC  
89  
28  
PD  
Power Dissipation  
0.71  
0.22  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction to Case  
Units  
FDP4N60NZ FDPF4N60NZ  
RθJC  
RθCS  
RθJA  
1.4  
0.5  
4.5  
Thermal Resistance, Case to Sink Typ  
Thermal Resistance, Junction to Ambient  
oC/W  
62.5  
62.5  
©2011 Fairchild Semiconductor Corporation  
FDP4N60NZ / FDPF4N60NZ Rev.C0  
1
www.fairchildsemi.com  

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