December 2011
UniFET-IITM
FDP4N60NZ / FDPF4N60NZ
N-Channel MOSFET
600V, 3.8A, 2.5Ω
Features
•
•
•
•
•
•
RDS(on) = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A
Low Gate Charge ( Typ. 8.3nC)
Low Crss ( Typ. 3.7pF)
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
Fast Switching
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
100% Avalanche Tested
Improved dv/dt Capability
•
•
ESD Improved Capability
RoHS Compliant
D
G
TO-220F
FDPF Series
TO-220
FDP Series
G D S
G D S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
Parameter
FDP4N60NZ FDPF4N60NZ
Units
Drain to Source Voltage
Gate to Source Voltage
600
±25
V
V
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
3.8
2.3
15
3.8*
2.3*
15*
ID
Drain Current
A
IDM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
223.8
3.8
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
8.9
mJ
V/ns
W
W/oC
oC
10
(TC = 25oC)
- Derate above 25oC
89
28
PD
Power Dissipation
0.71
0.22
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Units
FDP4N60NZ FDPF4N60NZ
RθJC
RθCS
RθJA
1.4
0.5
4.5
Thermal Resistance, Case to Sink Typ
Thermal Resistance, Junction to Ambient
oC/W
62.5
62.5
©2011 Fairchild Semiconductor Corporation
FDP4N60NZ / FDPF4N60NZ Rev.C0
1
www.fairchildsemi.com