Datasheet > FDMC2674_12

FDMC2674_12

更新时间： 2024-10-28 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	318K
描述
N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mÎ©

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数据手册

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FDMC2674_12 数据手册

November 2012

FDMC2674

N-Channel UltraFET Trench MOSFET

220V, 7.0A, 366mΩ

Features

General Description

Max r_DS(on)= 366mΩ at V_GS= 10V, I_D= 1.0A

Typ Q_g= 12.7nC at V_GS= 10V

Low Miller charge

UltraFET device combines characteristics that enable

benchmark efficiency in power conversion applications.

Optimized for r_DS(on), low ESR, low total and Miller gate charge,

these devices are ideal for high frequency DC to DC converters.

Low Q_rrBody Diode

Application

Optimized efficiency at high frequencies

UIS Capability ( Single Pulse and Repetitive Pulse)

RoHS Compliant

DC/DC converters and Off-Line UPS

Distributed Power Architectures

Bottom

D D

Top

G S

MLP 3.3x3.3

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

220

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Silicon limited)

-Continuous

T_C= 25°C

T_A= 25°C

7.0

I_D

(Note 1b)

(Note 3)

1.0

-Pulsed

13.8

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

(Note 1a)

2.1

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(Note 1)

3.0

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMC2674

MLP 3.3X3.3

3000 units

FDMC2674 Rev.F3

www.fairchildsemi.com

12 3 4 5 6 7

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