Datasheet > CMPA1D1E025F-TB

CMPA1D1E025F-TB

更新时间： 2024-11-21 01:11:43

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
17页	4067K
描述
25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier

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CMPA1D1E025F-TB 数据手册

CMPA1D1E025F

25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Ampliﬁer

Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor

(HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon

carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The Ku

Band 25W MMIC is targeted for commercial Ku Band satellite communications

applications. It offers high gain and superior efﬁciency while meets OQPSK

linearity required for Satcom applications at 3dB backed off Psat operations.

This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic

ﬂanged package.

Typical Performance Over 13.75-14.5 GHz (T_C= 25˚C)

Parameter

13.75 GHz

14.0 GHz

24.5

14.25 GHz

14.5 GHz

Units

Small Signal Gain

Linear Output Power

Power Gain

24.5

Power Added Efﬁciency

Note¹: Measured at -30 dBc, 1.6 MHz from carrier, in the CMPA1D1E025F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha

Filter = 0.2.

Features

Applications

•

Satellite Communications Uplink

•

24 dB Small Signal Gain

40 W Typical Pulsed P_SAT

Operation up to 40 V

20 W linear power under OQPSK

Class A/B high gain, high efﬁciency 50 ohm MMIC Ku

Band high power ampliﬁer

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...17

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