Datasheet > CMPA2060035

CMPA2060035

更新时间： 2024-11-21 17:01:39

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
8页	354K
描述
35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier

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CMPA2060035 数据手册

CMPA2060035D

35 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier

Description

The CMP2060035D is a gallium nitride (GaN) high electron mobility

transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated electron

drif velocity, and higher thermal conductivity. GaN HEMTs also oﬀer

greater power density and wider bandwidths compared to Si and GaAs

transistors. This MMIC contains a two-stage reactively matched ampliꢀier

design approach enabling very wide bandwidths to be achieved.

PN's: CMPA2060035D

Features

Applications

•

29 dB small signal gain

35 W typical P_SAT

Operation up to 28 V

High breakdown voltage

High temperature operation

Size 0.144 x 0.162 x 0.004 inches

•

Ultra broadband drivers

Fiber drivers

Test instrumentation

EMC ampliꢀier drivers

Typical Performance Over 2.0 - 6.0 GHz (T_C= 25 °C)

Parameter

2.0 GHz

3.0 GHz

4.0 GHz

5.0 GHz

6.0 GHz

Units

Small Signal Gain

Output Power¹

Power Added Eﬀiciency

Note:

¹Typical data with 50 Ω output load, measured under CW drive at ꢀixed P_IN= 26 dBm, Temp = 25 °C.

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 0.2, SEPTEMBER 2023

For further information and support please visit:

https://www.macom.com/support

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