Datasheet > CMPA25650025F

CMPA25650025F

更新时间： 2024-11-01 19:36:11

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
12页	992K
描述
RF/Microwave Amplifier,

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技术参数
数据手册

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CMPA25650025F 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.68
Base Number Matches：	1

CMPA25650025F 数据手册

CMPA2560025F

25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

Description

Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated

electron driꢀ velocity and higher thermal conductivity. GaN HEMTs also

oﬀer greater power density and wider bandwidths compared to Si and

GaAs transistors. This MMIC contains a two-stage reactively matched

ampliﬁer enabling very wide bandwidths to be achieved in a small

footprint screw-down package featuring a Copper-Tungsten heat-sink.

PN: CMPA2560025F

Package Type: 780019

Typical Performance Over 2.5 - 6.0 GHz (T_C= 25˚C)

Parameter

2.5 GHz

27.5

4.0 GHz

14.9

6.0 GHz

23.1

Units

Gain

Saturated Output Power, P_SAT

Power Gain @ P_OUT43 dBm

PAE @ P_OUT43 dBm

35.8

177

25.6

23.1

100

16.3

31.5

11.6

30.7

Note:

¹P_SATis deﬁned as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA

Features

Applications

•

24 dB Small Signal Gain

25 W Typical P_SAT

Operation up to 28 V

High Breakdown Voltage

High Temperature Operation

•

Ultra Broadband Ampliﬁers

Fiber Drivers

Test Instrumentation

EMC Ampliﬁer Drivers

Figure 1.

Rev 3.1 – April 2020

4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com

12 3 4 5 6 7...12

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