Datasheet > CMPA2735075F-AMP

CMPA2735075F-AMP

更新时间： 2024-11-19 01:22:51

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	2130K
描述
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

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CMPA2735075F-AMP 数据手册

CMPA2735075F

75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor

(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior

properties compared to silicon or gallium arsenide, including higher breakdown

voltage, higher saturated electron drift velocity and higher thermal conductivity.

GaN HEMTs also offer greater power density and wider bandwidths compared

to Si and GaAs transistors. This MMIC contains a two-stage reactively matched

ampliﬁer design approach enabling very wide bandwidths to be achieved. This

MMIC enables extremely wide bandwidths to be achieved in a small footprint

screw-down package.

Typical Performance Over 2.7-3.5 GHz (T_C= 25˚C)

Parameter

2.7 GHz

2.9 GHz

3.1 GHz

3.3 GHz

3.5 GHz

Units

Small Signal Gain

Saturated Output Power, P_SAT

Power Gain @ P_SAT

PAE @ P_SAT

Note¹: P_SATis deﬁned as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA.

Features

Applications

•

27 dB Small Signal Gain

•

Civil and Military Pulsed Radar Ampli-

ﬁers

80 W Typical P_SAT

Operation up to 28 V

High Breakdown Voltage

•

High Temperature Operation

0.5” x 0.5” Total Product Size

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...10

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