Datasheet > CMPA5585025F

CMPA5585025F

更新时间： 2024-11-19 01:11:43

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
19页	2076K
描述
25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier

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CMPA5585025F 数据手册

CMPA5585025F

25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMPA5585025F is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

GaN has superior properties compared to silicon or gallium arsenide,

including higher breakdown voltage, higher saturated electron drift velocity

and higher thermal conductivity. GaN HEMTs also offer greater power

density and wider bandwidths compared to Si and GaAs transistors. This

MMIC is available in a 10 lead metal/ceramic ﬂanged package for optimal

electrical and thermal performance.

Typical Performance Over 5.8-8.4 GHz (T_C= 25˚C)

Parameter

5.8 GHz

29.5

6.4 GHz

24.0

7.2 GHz

24.0

7.9 GHz

24.0

8.4 GHz

22.0

Units

Small Signal Gain

Output Power¹

Power Gain¹

21.7

19.5

17.2

18.5

18.6

Power Added Efﬁciency¹

20.5

19.5

Note¹: Measured at -30 dBc, 1.6 MHz from carrier, in the CMPA5585025F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2.

Features

Applications

•

25 dB Small Signal Gain

•

Point to Point Radio

35 W Typical P_SAT

Communications

Operation up to 28 V

High Breakdown Voltage

Satellite Communication Uplink

•

High Temperature Operation

Size 1.00 x 0.385 inches

Subject to change without notice.

www.cree.com/rf

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