Datasheet > CMPA5585030F

CMPA5585030F

更新时间： 2024-09-28 01:25:55

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
17页	1066K
描述
30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier

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CMPA5585030F 数据手册

CMPA5585030F

30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMPA5585030F is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

GaN has superior properties compared to silicon or gallium arsenide,

including higher breakdown voltage, higher saturated electron drift velocity

and higher thermal conductivity. GaN HEMTs also offer greater power

density and wider bandwidths compared to Si and GaAs transistors. This

MMIC is available in a 10 lead metal/ceramic ﬂanged package for optimal

electrical and thermal performance.

Typical Performance Over 5.8-8.4 GHz (T_C= 25˚C)

Parameter

S21^1,2

5.8 GHz

25.9

6.4 GHz

23.8

7.2 GHz

26.5

7.9 GHz

24.5

8.4 GHz

26.7

Units

Power Gain^,2,5

PAE^1,2,4,5

22.3

19.0

20.9

21.6

21.2

24.7

20.7

20.3

22.6

22.9

ACLR^1,2,3,5

-37

-42

-33

-34

-40

dBC

Notes (unless otherwise speciﬁed):

1. At 25˚C

2. Measurements are performed using Cree test ﬁxture AD-938516

3. Under OQPSK modulated signal, 1.6 Msps, PN23, Alpha Filter = 0.2

4. Power Added Efﬁciency = (P_OUT- P_IN) / PDC

5. Measured at P_OUT= 41 dBm

Features

Applications

•

25 dB Small Signal Gain

•

Point to Point Radio

30 W Typical P_SAT

Communications

Operation up to 28 V

High Breakdown Voltage

Satellite Communication Uplink

•

High Temperature Operation

Size 1.00 x 0.385 inches

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...17

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