Datasheet > CMPD1001_10

CMPD1001_10

更新时间： 2024-11-18 09:27:43

品牌	Logo	应用领域
CENTRAL		二极管开关
页数	文件大小	规格书
2页	518K
描述
SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE

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CMPD1001_10 数据手册

CMPD1001

CMPD1001A

CMPD1001S

www.centralsemi.com

SURFACE MOUNT

HIGH CURRENT

SILICON SWITCHING DIODE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD1001 series

types are silicon switching diodes manufactured by

the epitaxial planar process, designed for applications

requiring high current capability.

SOT-23 CASE

The following configurations are available:

CMPD1001

CMPD1001A

CMPD1001S

SINGLE

DUAL, COMMON ANODE

DUAL, IN SERIES

MARKING CODE: L20

MARKING CODE: L22

MARKING CODE: L21

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

250

Continuous Forward Current

Peak Repetitive Forward Current

Peak Repetitive Reverse Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

600

FRM

RRM

600

6.0

FSM

1.0

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

100

UNITS

μA

V =90V

V =90V, T =150°C

100

I =100μA

I =10mA

0.75

0.84

0.90

1.00

1.25

I =50mA

I =100mA

I =200mA

I =400mA

V =0, f=1.0MHz

I =I =30mA, Rec. to 3.0mA, R =100Ω

R6 (25-January 2010)

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