TM
CMPD2003
CMPD2003C
CMPD2003S
CMPD2004
CMPD2004C
CMPD2004S
Central
ꢀꢁꢂ^
Semiconductor Corp.
DESCRIPTION
SURFACE MOUNT
HIGH VOLTAGE SWITCHING DIODE
TheCENTRALSEMICONDUCTORCMPD2003,
CMPD2003C, CMPD2003S, CMPD2004,
CMPD2004C,andCMPD2004Stypesaresilicon
switching diodes manufactured by the epitaxial
planar process, designed for applications
requiring high voltage capability.
SOT-23 CASE
The following configurations are available:
CMPD2003
CMPD2003C
CMPD2003S
CMPD2004
CMPD2004C
CMPD2004S
SINGLE
MARKING CODE: A82
MARKING CODE: C3C
MARKING CODE: C3S
MARKING CODE: D53
MARKING CODE: DB7
MARKING CODE: DB6
DUAL, COMMON CATHODE
DUAL, IN SERIES
SINGLE
DUAL, COMMON CATHODE
DUAL, IN SERIES
MAXIMUM RATINGS (T =25°C)
A
CMPD2003
CMPD2004
CMPD2003C CMPD2004C
CMPD2003S CMPD2004S
SYMBOL
UNITS
V
Continuous Reverse Voltage
Peak RepetitiveReverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 ms
Forward Surge Current, tp=1 s
Power Dissipation
V
200
250
240
300
R
V
V
RRM
I
200
200
mA
mA
mA
mA
mA
mW
O
I
I
250
225
F
625
625
FRM
I
I
4000
1000
4000
1000
FSM
FSM
P
350
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
-65 to +150
357
°C
°C/W
J stg
Q
JA
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)
A
CMPD2003
CMPD2003C
CMPD2003S
CMPD2004
CMPD2004C
CMPD2004S
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNIT
BV
I =100mA
250
300
V
nA
R
R
I
V =200V
100
-
R
R
170