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CMPD2003-1 PDF预览

CMPD2003-1

更新时间: 2024-11-17 22:28:39
品牌 Logo 应用领域
CENTRAL 二极管开关高压
页数 文件大小 规格书
2页 112K
描述
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE

CMPD2003-1 数据手册

 浏览型号CMPD2003-1的Datasheet PDF文件第2页 
TM  
CMPD2003  
CMPD2003C  
CMPD2003S  
CMPD2004  
CMPD2004C  
CMPD2004S  
Central  
ꢀꢁꢂ^  
Semiconductor Corp.  
DESCRIPTION  
SURFACE MOUNT  
HIGH VOLTAGE SWITCHING DIODE  
TheCENTRALSEMICONDUCTORCMPD2003,  
CMPD2003C, CMPD2003S, CMPD2004,  
CMPD2004C,andCMPD2004Stypesaresilicon  
switching diodes manufactured by the epitaxial  
planar process, designed for applications  
requiring high voltage capability.  
SOT-23 CASE  
The following configurations are available:  
CMPD2003  
CMPD2003C  
CMPD2003S  
CMPD2004  
CMPD2004C  
CMPD2004S  
SINGLE  
MARKING CODE: A82  
MARKING CODE: C3C  
MARKING CODE: C3S  
MARKING CODE: D53  
MARKING CODE: DB7  
MARKING CODE: DB6  
DUAL, COMMON CATHODE  
DUAL, IN SERIES  
SINGLE  
DUAL, COMMON CATHODE  
DUAL, IN SERIES  
MAXIMUM RATINGS (T =25°C)  
A
CMPD2003  
CMPD2004  
CMPD2003C CMPD2004C  
CMPD2003S CMPD2004S  
SYMBOL  
UNITS  
V
Continuous Reverse Voltage  
Peak RepetitiveReverse Voltage  
Peak Repetitive Reverse Current  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=1 ms  
Forward Surge Current, tp=1 s  
Power Dissipation  
V
200  
250  
240  
300  
R
V
V
RRM  
I
200  
200  
mA  
mA  
mA  
mA  
mA  
mW  
O
I
I
250  
225  
F
625  
625  
FRM  
I
I
4000  
1000  
4000  
1000  
FSM  
FSM  
P
350  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
-65 to +150  
357  
°C  
°C/W  
J stg  
Q
JA  
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)  
A
CMPD2003  
CMPD2003C  
CMPD2003S  
CMPD2004  
CMPD2004C  
CMPD2004S  
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
MIN  
MAX  
UNIT  
BV  
I =100mA  
250  
300  
V
nA  
R
R
I
V =200V  
100  
-
R
R
170  

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SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE