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CMPD2003TR

更新时间: 2024-01-18 17:04:57
品牌 Logo 应用领域
CENTRAL 整流二极管开关光电二极管高压
页数 文件大小 规格书
2页 82K
描述
Rectifier Diode, 1 Element, 0.25A, 250V V(RRM), Silicon, SOT-23, 3 PIN

CMPD2003TR 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 V最大非重复峰值正向电流:4 A
元件数量:1最高工作温度:150 °C
最大输出电流:0.25 A最大重复峰值反向电压:250 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YESBase Number Matches:1

CMPD2003TR 数据手册

 浏览型号CMPD2003TR的Datasheet PDF文件第2页 
TM  
CMPD2003  
CMPD2004  
CMPD2004S  
Ce n t r a l  
S e m ic o n d u c t o r Co r p .  
HIGH VOLTAGE  
SWITCHING DIODE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR  
CMPD2003, CMPD2004, CMPD2004S types  
are silicon switching diodes manufactured by  
the epitaxial planar process, designed for  
applications requiring high voltage capability.  
SOT-23 CASE  
The following configurations are available:  
CMPD2003  
CMPD2004  
CMPD2004S  
SINGLE  
SINGLE  
DUAL, IN SERIES  
MARKING CODE: A82  
MARKING CODE: D53  
MARKING CODE: DB6  
o
MAXIMUM RATINGS (T =25 C)  
A
CMPD2004  
SYMBOL  
CMPD2003  
200  
CMPD2004S  
240  
UNITS  
V
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Peak Repetitive Reverse Current  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=1 µs  
Forward Surge Current, tp=1 s  
Power Dissipation  
V
V
R
RRM  
250  
200  
250  
625  
4000  
1000  
300  
200  
225  
625  
4000  
1000  
V
I
I
I
I
I
P
mA  
mA  
mA  
mA  
mA  
mW  
O
F
FRM  
FSM  
FSM  
350  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
o
T ,T  
-65 to +150  
357  
C
C/W  
J stg  
Θ
JA  
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
CMPD2004  
CMPD2004S  
CMPD2003  
SYMBOL  
TEST CONDITIONS  
MIN  
250  
MAX  
MIN  
300  
MAX  
UNIT  
V
B
I =100 µA  
VR  
R
I
I
I
I
V =200V  
100  
100  
-
-
-
nA  
µA  
nA  
µA  
V
R
R
R
R
R
o
V =200V, T =150 C  
R
A
V =240V  
100  
100  
1.0  
R
o
V =240V, T =150 C  
-
R
A
V
I =100mA  
1.0  
F
F
132  

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