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CMPD2003S PDF预览

CMPD2003S

更新时间: 2024-09-29 22:28:39
品牌 Logo 应用领域
CENTRAL 二极管开关高压
页数 文件大小 规格书
2页 112K
描述
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE

CMPD2003S 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SOT-23
包装说明:SOT-23, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.18
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
最大非重复峰值正向电流:4 A元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.25 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.35 W认证状态:Not Qualified
最大重复峰值反向电压:250 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CMPD2003S 数据手册

 浏览型号CMPD2003S的Datasheet PDF文件第2页 
TM  
CMPD2003  
CMPD2003C  
CMPD2003S  
CMPD2004  
CMPD2004C  
CMPD2004S  
Central  
ꢀꢁꢂ^  
Semiconductor Corp.  
DESCRIPTION  
SURFACE MOUNT  
HIGH VOLTAGE SWITCHING DIODE  
TheCENTRALSEMICONDUCTORCMPD2003,  
CMPD2003C, CMPD2003S, CMPD2004,  
CMPD2004C,andCMPD2004Stypesaresilicon  
switching diodes manufactured by the epitaxial  
planar process, designed for applications  
requiring high voltage capability.  
SOT-23 CASE  
The following configurations are available:  
CMPD2003  
CMPD2003C  
CMPD2003S  
CMPD2004  
CMPD2004C  
CMPD2004S  
SINGLE  
MARKING CODE: A82  
MARKING CODE: C3C  
MARKING CODE: C3S  
MARKING CODE: D53  
MARKING CODE: DB7  
MARKING CODE: DB6  
DUAL, COMMON CATHODE  
DUAL, IN SERIES  
SINGLE  
DUAL, COMMON CATHODE  
DUAL, IN SERIES  
MAXIMUM RATINGS (T =25°C)  
A
CMPD2003  
CMPD2004  
CMPD2003C CMPD2004C  
CMPD2003S CMPD2004S  
SYMBOL  
UNITS  
V
Continuous Reverse Voltage  
Peak RepetitiveReverse Voltage  
Peak Repetitive Reverse Current  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=1 ms  
Forward Surge Current, tp=1 s  
Power Dissipation  
V
200  
250  
240  
300  
R
V
V
RRM  
I
200  
200  
mA  
mA  
mA  
mA  
mA  
mW  
O
I
I
250  
225  
F
625  
625  
FRM  
I
I
4000  
1000  
4000  
1000  
FSM  
FSM  
P
350  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
-65 to +150  
357  
°C  
°C/W  
J stg  
Q
JA  
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)  
A
CMPD2003  
CMPD2003C  
CMPD2003S  
CMPD2004  
CMPD2004C  
CMPD2004S  
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
MIN  
MAX  
UNIT  
BV  
I =100mA  
250  
300  
V
nA  
R
R
I
V =200V  
100  
-
R
R
170  

CMPD2003S 替代型号

型号 品牌 替代类型 描述 数据表
BAV23S NEXPERIA

功能相似

Dual high-voltage switching diodesProduction
BAV23S NXP

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General purpose double diode

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