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CMPD2003_10

更新时间: 2024-11-18 12:20:07
品牌 Logo 应用领域
CENTRAL 二极管开关高压
页数 文件大小 规格书
2页 590K
描述
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE

CMPD2003_10 数据手册

 浏览型号CMPD2003_10的Datasheet PDF文件第2页 
CMPD2003  
CMPD2004  
CMPD2003A  
CMPD2003C  
CMPD2003S  
CMPD2004A  
CMPD2004C  
CMPD2004S  
www.centralsemi.com  
SURFACE MOUNT  
DESCRIPTION:  
HIGH VOLTAGE  
The CENTRAL SEMICONDUCTOR CMPD2003,  
CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004,  
CMPD2004A, CMPD2004C and CMPD2004S types  
are silicon switching diodes manufactured by the  
epitaxial planar process, designed for applications  
requiring high voltage capability.  
SILICON SWITCHING DIODE  
SOT-23 CASE  
The following configurations are available:  
CMPD2003  
SINGLE  
MARKING CODE: A82  
MARKING CODE: 8A2  
MARKING CODE: C3C  
MARKING CODE: C3S  
MARKING CODE: D53  
MARKING CODE: DB8  
MARKING CODE: DB7  
MARKING CODE: DB6  
CMPD2003A  
CMPD2003C  
CMPD2003S  
CMPD2004  
CMPD2004A  
CMPD2004C  
CMPD2004S  
DUAL, COMMON ANODE  
DUAL, COMMON CATHODE  
DUAL, IN SERIES  
SINGLE  
DUAL, COMMON ANODE  
DUAL, COMMON CATHODE  
DUAL, IN SERIES  
CMPD2003  
CMPD2003A  
CMPD2003C  
CMPD2003S  
200  
CMPD2004  
CMPD2004A  
CMPD2004C  
CMPD2004S  
240  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Average Forward Current  
V
R
V
250  
300  
V
RRM  
I
200  
200  
mA  
mA  
mA  
A
O
Continous Forward Current  
I
250  
225  
F
Peak Repetitive Forward Current  
Peak Forward Surge Current, tp=1.0μs  
Peak Forward Surge Current, tp=1.0s  
Power Dissipation  
I
625  
4.0  
1.0  
350  
FRM  
I
FSM  
FSM  
I
A
P
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
stg  
-65 to +150  
357  
J
Θ
°C/W  
JA  
R9 (25-January 2010)  

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