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CMPD1001ATIN/LEAD PDF预览

CMPD1001ATIN/LEAD

更新时间: 2024-11-21 13:06:55
品牌 Logo 应用领域
CENTRAL 二极管开关
页数 文件大小 规格书
2页 82K
描述
Rectifier Diode,

CMPD1001ATIN/LEAD 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.71
JESD-609代码:e0峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Tin/Lead (Sn/Pb)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CMPD1001ATIN/LEAD 数据手册

 浏览型号CMPD1001ATIN/LEAD的Datasheet PDF文件第2页 
TM  
CMPD1001  
CMPD1001A  
CMPD1001S  
Ce n t r a l  
S e m ic o n d u c t o r Co r p .  
HIGH CURRENT  
SWITCHING DIODE  
DESCRIPTION:  
The  
CENTRAL  
SEMICONDUCTOR  
CMPD1001 series types are silicon switching  
diodes manufactured by the epitaxial planar  
process, designed for applications requiring  
high current capability.  
SOT-23 CASE  
The following configurations are available:  
CMPD1001  
CMPD1001S  
CMPD1001A  
SINGLE  
DUAL, IN SERIES  
DUAL, COMMON ANODE  
MARKING CODE: L20  
MARKING CODE: L21  
MARKING CODE: L22  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
Continuous Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current  
Peak Repetitive Reverse Current  
Forward Surge Current, tp=1 µs  
Forward Surge Current, tp=1 s  
Power Dissipation  
Operating and Storage  
Junction Temperature  
Thermal Resistance  
V
90  
250  
600  
600  
6000  
1000  
350  
V
mA  
mA  
mA  
mA  
mA  
mW  
R
I
I
I
I
I
P
F
FRM  
RRM  
FSM  
FSM  
D
o
o
T ,T  
-65 to +150  
357  
C
J stg  
Θ
C/W  
JA  
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
90  
MAX  
UNIT  
V
nA  
µA  
V
B
I =100 µA  
VR  
R
I
I
V =90V  
100  
100  
0.75  
R
R
R
o
V =90V, T =150 C  
R
A
V
I =10mA  
F
F
130  

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