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CMPA801B025 PDF预览

CMPA801B025

更新时间: 2024-02-06 20:25:26
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
14页 2314K
描述
25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier

CMPA801B025 技术参数

生命周期:ActiveReach Compliance Code:unknown
Base Number Matches:1

CMPA801B025 数据手册

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CMPA801B025  
25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier  
Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobili
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC
GaN has superior properties compared to silicon or gallium arsenide, includin
higher breakdown voltage, higher saturated electron drift velocity and highe
thermal conductivity. GaN HEMTs also offer greater power density and wide
bandwidths compared to Si and GaAs transistors. This MMIC is available in  
a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-  
factor pill package (CMPA801B025P) for optimal electrical and thermal performance.  
Typical Performance Over 8.5-11.0 GHz (TC = 25˚C)  
Parameter  
Output Power1  
8.5 GHz  
38.0  
10.0 GHz  
37.0  
11.0 GHz  
35.5  
Units  
W
Output Power1  
45.8  
45.7  
45.5  
dBm  
%
Power Added Efficiency1  
37.0  
36.0  
35.0  
Note1: Measured in CMPA801B025F-AMP under 100 uS pulse width, 10% duty.  
Features  
Applications  
8.5 - 11.0 GHz Operation  
Marine Radar  
Communications  
Satellite Communication Uplink  
37 W POUT typical  
16 dB Power Gain  
36 % Typical PAE  
50 Ohm internally matched  
<0.1 dB Power droop  
Subject to change without notice.  
www.cree.com/rf  
1

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