Datasheet > CMPA901A035

CMPA901A035

更新时间： 2024-11-19 15:18:47

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MACOM		/
页数	文件大小	规格书
23页	1887K
描述
35 W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers

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CMPA901A035 数据手册

CMPA901A035F

35 W, 9.0 - 11.0 GHz, GaN MMIC, Power Ampliﬁer

Description

The CMPA901A035F is a gallium nitride (GaN) high electron mobility

transistor (HEMT) based monolithic microwave integrated circuit (MMIC)

on a silicon carbide (SiC) substrate. The semiconductor oﬀers 35 Watts

of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT

MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm

metal/ceramic flanged package. It oﬀers high gain and superior eﬀiciency

in a small footprint package at 50 ohms.

Package Types: 440213

PN’s: CMPA901A035F

Features

Applications

•

35 W typical P_SAT

>33% typical power added eﬀiciency

22.5 dB large signal gain

•

Military radar

Marine radar

Weather radar

Medical applications

High temperature operation

Note:

Features are typical performance across frequency under 25 °C

operation. Please reference performance charts for additional details.

Typical Performance Over 9.0 - 11.0 GHz (T_C= 25 °C)

Parameter

9.0 GHz

34.8

9.5 GHz

32.4

10.0 GHz

10.5 GHz

11.0 GHz

32.6

Units

Small Signal Gain^{1, 2}

Output Power^{1, 3}

Power Gain^{1, 3}

32.7

33.2

45.9

45.8

45.6

22.6

45.6

22.6

45.4

dBm

22.9

22.8

22.4

Power Added Eﬀiciency^{1, 3}

Notes:

¹V_DD= 28 V, I_DQ= 1500 mA.

²Measured at P = -20 dBm.

³Measured at P^I_IN^N= 23 dBm and 300 μs; duty cycle = 20%.

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 0.5, SEPTEMBER 2023

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...23

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