Datasheet > CMPA801B025P

CMPA801B025P

更新时间： 2024-01-04 02:10:36

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
14页	1048K
描述
RF/Microwave Amplifier,

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技术参数
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CMPA801B025P 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
Base Number Matches：	1

CMPA801B025P 数据手册

CMPA801B025

25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier

Description

Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN

has superior properties compared to silicon or gallium arsenide, including

higher breakdown voltage, higher saturated electron driꢀ velocity and higher

thermal conductivity. GaN HEMTs also oﬀer greater power density and wider

bandwidths compared to Si and GaAs transistors. This MMIC is available in a

10-lead metal/ceramic ﬂanged package (CMPA801B025F) or small form-factor

pill package (CMPA801B025P) for optimal electrical and thermal performance.

PNs: CMPA801B025F and CMPA801B025P

Package Types: 440213 and 440216

Typical Performance Over 8.5 - 11.0 GHz (T_C= 25˚C)

Parameter

Output Power¹

8.5 GHz

38.0

10.0 GHz

37.0

11.0 GHz

35.5

Units

Output Power¹

45.8

45.7

45.5

dBm

Power Added Eﬀiciency¹

37.0

36.0

35.0

Note¹: Measured in CMPA801B025F-AMP under 100 uS pulse width, 10% duty

Features

Applications

•

Marine Radar

Communications

Satellite Communication Uplink

•

8.5 - 11.0 GHz Operation

37 W P_OUTtypical

16 dB Power Gain

36% Typical PAE

50 Ohm Internally Matched

<0.1 dB Power Droop

Rev 4.1 - April 2020

4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com

12 3 4 5 6 7...14

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