Datasheet > CMPA801B025F-AMP

CMPA801B025F-AMP

更新时间： 2024-11-19 01:08:27

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
14页	2314K
描述
25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier

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CMPA801B025F-AMP 数据手册

CMPA801B025

25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

GaN has superior properties compared to silicon or gallium arsenide, including

higher breakdown voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density and wider

bandwidths compared to Si and GaAs transistors. This MMIC is available in

a 10-lead metal/ceramic ﬂanged package (CMPA801B025F) or small form-

factor pill package (CMPA801B025P) for optimal electrical and thermal performance.

Typical Performance Over 8.5-11.0 GHz (T_C= 25˚C)

Parameter

Output Power¹

8.5 GHz

38.0

10.0 GHz

37.0

11.0 GHz

35.5

Units

Output Power¹

45.8

45.7

45.5

dBm

Power Added Efﬁciency¹

37.0

36.0

35.0

Note¹: Measured in CMPA801B025F-AMP under 100 uS pulse width, 10% duty.

Features

Applications

•

8.5 - 11.0 GHz Operation

•

Marine Radar

Communications

Satellite Communication Uplink

37 W P_OUTtypical

16 dB Power Gain

36 % Typical PAE

50 Ohm internally matched

<0.1 dB Power droop

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...14

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