Datasheet > CMPA801B025D

CMPA801B025D

更新时间： 2024-11-18 21:22:43

品牌	Logo	应用领域
科锐 - CREE		高功率电源射频微波
页数	文件大小	规格书
7页	361K
描述
Wide Band High Power Amplifier, 8000MHz Min, 11000MHz Max,

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技术参数
数据手册

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CMPA801B025D 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.71
构造：	COMPONENT	增益：	28 dB
最大工作频率：	11000 MHz	最小工作频率：	8000 MHz
射频/微波设备类型：	WIDE BAND HIGH POWER	最大电压驻波比：	5
Base Number Matches：	1

CMPA801B025D 数据手册

CMPA801B025D

25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMP801B025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based

monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or

gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to

Si and GaAs transistors. This MMIC contains a two-stage reactively matched ampliﬁer design approach

enabling very wide bandwidths to be achieved.

Typical Performance Over 8.0-11.0 GHz (T_C= 25˚C)

Parameter

8.0 GHz

9.0 GHz

10.0 GHz

11.0 GHz

Units

Small Signal Gain

P_OUT@ P_IN= 25 dBm

Power Gain @ P_IN= 25 dBm

PAE @ P_IN= 25 dBm

Features

Applications

• 28 dB Small Signal Gain

• 35 W Typical P_SAT

• Point to Point Radio

• Communications

• Test Instrumentation

• EMC Ampliﬁers

• Operation up to 28 V

• High Breakdown Voltage

• High Temperature Operation

• Size 0.142 x 0.188 x 0.004 inches

Subject to change without notice.

www.cree.com/rf

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与CMPA801B025D相关器件

型号	品牌	获取价格	描述	数据表
CMPA801B025F	CREE	获取价格	25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier
CMPA801B025F-AMP	CREE	获取价格	25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier
CMPA801B025F-TB	CREE	获取价格	25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier
CMPA801B025P	CREE	获取价格	RF/Microwave Amplifier,
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