Datasheet > CMPA601C025D

CMPA601C025D

更新时间： 2024-09-28 01:24:19

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
6页	542K
描述
25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier

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CMPA601C025D 数据手册

CMPA601C025D

25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMPA601C025D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC)

on a silicon carbide substrate, using a 0.25 μm gate length fabrication

process. GaN-on-SiC has superior properties compared to silicon,

gallium arsenide or GaN-on-Si, including higher breakdown voltage,

higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater

power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors. This MMIC

contains a reactively matched ampliﬁer design approach enabling very wide bandwidths to be achieved.

Typical Performance Over 6.0-12.0 GHz (T_C= 25˚C)

Parameter

6.0 GHz

40.0

8.0 GHz

42.0

10.0 GHz

43.0

12.0 GHz

36.0

Units

Small Signal Gain

P_OUT@ P_IN= 19 dBm

Power Gain @ P_IN= 19 dBm

PAE @ P_IN= 19 dBm

48.0

49.0

47.4

47.3

dBm

63.0

79.0

55.0

54.0

29.0

30.0

28.4

27.3

33.0

49.0

35.0

32.0

Note: All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 0.1%.

Features

Applications

• Jamming Ampliﬁers

• Test Equipment Ampliﬁers

• Broadband Ampliﬁers

• Radar Ampliﬁers

• 32 dB Small Signal Gain

• 30 W Typical P_SAT

• Operation up to 28 V

• High Breakdown Voltage

• High Temperature Operation

• Size 0.172 x 0.239 x 0.004 inches

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6

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与CMPA601C025D相关器件

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