Datasheet > CMPA5585030D

CMPA5585030D

更新时间： 2024-11-19 01:25:55

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
9页	453K
描述
30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier

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技术参数
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CMPA5585030D 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.67
Base Number Matches：	1

CMPA5585030D 数据手册

CMPA5585030D

30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMPA5585030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave

integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher

breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer

greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage

reactively matched ampliﬁer design approach enabling very wide bandwidths to be achieved.

Typical Performance Over 5.5-8.5 GHz (T_C= 25˚C)

Parameter

5.5 GHz

32.5

61.2

21.9

6.5 GHz

29.7

55.1

21.4

7.5 GHz

30.1

57.3

21.6

8.5 GHz

29.5

53.8

21.3

Units

Small Signal Gain

P_OUT@ P_IN= 26 dBm

Power Gain @ P_IN= 26 dBm

PAE @ P_IN= 26 dBm

Features

Applications

•

30 dB Small Signal Gain

50 W Typical P_SAT

•

Point to Point Radio

Communications

Operation up to 28 V

Test Instrumentation

High Breakdown Voltage

High Temperature Operation

EMC Ampliﬁer Drivers

•

Size 0.142 x 0.188 x 0.004 inches

Subject to change without notice.

www.cree.com/RF

12 3 4 5 6 7...9

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