Datasheet > CMPA5585030

CMPA5585030

更新时间： 2024-09-28 15:18:27

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
9页	340K
描述
30 W; 5.5 - 8.5 GHz; GaN MMIC Power Amplifier

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CMPA5585030 数据手册

CMPA5585030D

30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Ampliﬁer

Description

The CMPA5585030D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated electron

drif velocity and higher thermal conductivity. GaN HEMTs also oﬀer

greater power density and wider bandwidths compared to Si and GaAs

transistors. This MMIC contains a two-stage reactively matched ampliꢀier

design approach enabling very wide bandwidths to be achieved.

Typical Performance Over 5.5 - 8.5 GHz (T_C= 25ºC)

Parameter

5.5 GHz

32.5

6.5 GHz

29.7

7.5 GHz

30.1

8.5 GHz

29.5

Units

Small Signal Gain

P_OUT@ P_IN= 26 dBm

61.2

55.1

57.3

53.8

Power Gain @ P_IN= 26 dBm

PAE @ P_IN= 26 dBm

21.9

21.4

21.6

21.3

Features

Applications

•

30 dB Small Signal Gain

50 W Typical P_SAT

Operation up to 28 V

High Breakdown Voltage

High Temperature Operation

Size 0.142 x 0.188 x 0.004 inches

•

Point to Point Radio

Communications

Test Instrumentation

EMC Ampliꢀier Drivers

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 2.0, 2022-8-23

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...9

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