Datasheet > CMPA5259030D

CMPA5259030D

更新时间： 2024-11-18 20:51:35

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
9页	621K
描述
RF/Microwave Amplifier,

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技术参数
数据手册

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CMPA5259030D 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
Base Number Matches：	1

CMPA5259030D 数据手册

CMPA5259030D

30 W, 5.2 - 5.9 GHz, GaN MMIC, Power Ampliﬁer

Cree’s CMPA5259030D is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) based monolithic microwave integrated

circuit (MMIC). GaN has superior properties compared to silicon

or gallium arsenide, including higher breakdown voltage, higher

saturated electron drift velocity and higher thermal conductivity.

GaN HEMTs also oﬀer greater power density and wider bandwidths

compared to Si and GaAs transistors. This MMIC contains a

two-stage reactively matched ampliﬁer design approach enabling very wide

bandwidths to be achieved.

Typical Performance Over 5.2 - 5.9 GHz (T_C= 70˚C)

Parameter

5.2 GHz

5.5 GHz

5.9 GHz

Units

Small Signal Gain

32.5

P_OUT@ P_IN= 20 dBm

Power Gain @ P_IN= 20 dBm

PAE @ P_IN= 20 dBm

Notes:

Pulse Width = 500 μs, Duty Cycle = 20%, mounted to 40 mil thick CPC carrier at 70˚C.

Features

Applications

• 33 dB Small Signal Gain

• Military C Band Radar

• 30 W Typical P_SAT

• Operation up to 28 V

• High Breakdown Voltage

• High Temperature Operation

• Size 0.102 x 0.133 x 0.004 inches

Subject to change without notice.

www.cree.com/rf

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