Datasheet > CMPA5259050F

CMPA5259050F

更新时间： 2024-11-19 01:25:15

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
11页	909K
描述
50 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers

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CMPA5259050F 数据手册

CMPA5259050F

50 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Ampliﬁers

Cree’s CMPA5259050F is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) designed speciﬁcally for high

eﬃciency, high gain, and wide bandwidth capabilities, which

makes CMPA5259050F ideal for 5.2 - 5.9 GHz Radar ampliﬁer

applications. The transistor is supplied in a 0.5 inch square

ceramic/metal ﬂange package.

Typical Performance Over 5.2-5.9 GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

5.2 GHz

5.5 GHz

5.9 GHz

Units

Small Signal Gain

31.4

30.8

31.0

Output Power

Eﬃciency

59.6

51.5

-12.5

56.0

50.1

-12.0

55.2

51.4

-7.0

Input Return Loss

Note:

100 μsec Pulse Width, 10% Duty Cycle, P_IN= 26 dBm

Features

Applications

• AESA Radar

• 30 dB Small Signal Gain

• 50% Eﬃciency at P_SAT

• Operation up to 28 V

• High Breakdown Voltage

• 0.5 inch-square package

• Defense Radar

• Fire Control Radar

• Naval, Marine, Ground Protection

Radar

• Weather Radar

Subject to change without notice.

www.cree.com/rf

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